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?: Angstrom

A-defects: Dislocation loops in silicon formed by agglomeration of interstitial

AA: Atomic absorption

AE: Acid etch

AFM: Atomic force microscopy

ALCVD : Atomic layer chemical vapor deposition

AMC : Barrel or batch type epi reactor (Applied Materials)

APCVD: Atmospheric:pressure chemical vapor deposition furnace

ASIC: Application specific integrated circuit

ASM: A single-chamber epi reactor (ASM America)

ASTM: American Standard Test Method

ASTM : American society for testing and materials


BESOI: Bonded and Etch Back SOI

BGSOI : Bonded and Grind Back SOI

BJT : Bipolar Junction Transistor

BMD: Bulk Micro-defects or Bulk Micro-defect Density

BOE: Buffered Oxide Etch

Box: Buried Oxide Layer

BP: Backside Polish

BV: Breakdown Voltage

Bvox: Breakdown Voltage-oxide


°C : Centigrade

°C/min: Centigrade per minute

CD: Critical dimension

CE: Caustic Etch

Cm: Centimeter (0.01 meter)

CMOS: Complementary metal Oxide Semiconductor

CMP: Chemical Mechanical Polishing

CO : Carbon Monoxide

CO²: Carbon Dioxide

COO: Cost of Ownership

COP’s: Crystal Originated Particles

CoQC: Certificate of Quality Conformance

CP: Crystal Puller

CV : Capacity or capacitance voltage

CVD: Chemical Vapor Deposition

CZ: Czochralski method of pulling single crystal.


D-defects : Very small voids in Silicon formed by agglomeration of vacancies

DIBL: Drain induced barrier lowering

DIC : Differential interference contrast

DL: Diffusion length

DMOS: Double-diffused MOS

DOE: Design of Experiments

DOF: Depth of Focus

DRAM: Dynamic Random Access memory

Dsod : Direct Surface oxide Defect

DSP: Double Sided Polish

DZ: Denuded Zone


eDRAM: Embedded Dynamic Random Access Memory

EG: Enhanced Gettering

EEPROM: Electrically:erasable and Programmable Read-only Memory

EPROM: Erasable and Programmable Read-only memory

EOT: Equivalent Oxide Thickness

EPI : Epitaxy

ESF : Epi Stacking Fault


FBE: Floating Body Effect

FET: Field Effect Transistor

FD:SOI: Fully depleted silicon-on-Insulator

FPD: Flow pattern Defect (ref. Crystal)

FPD: Focal Plane Deviation (ref. Mechanical flatness)

FRAM: Ferroelectric Random Access Memory

FTIR : Fourier Transform Infra-Red Spectroscopy

FZ: Float Zone method of Crystal Pulling


GBIR: Global flatness, back:referenced

Ge OI: Germanium-on-Insulator

GFA: Gas Fusion Analysis

GOI: Gate Oxide Integrity

GTIR: Global Total Indicated Reading

GUI: Graphical User Interface


: Hydrogen Gas

H²O²: Hydrogen Peroxide

HCl: Hydrogen Chloride

HF : Hydrofluoric Acid

HMOS: High performance MOS

HZ: Hot zone


IC: Integrated Circuit

IDM: Integrated Device Manufacture

IG: Internal Gettering

IGBT : Insulated Gate Bipolar Transistor

IQC : Incoming Quality Control

ISO: Internation Standards Organization

ITOX: Internal Oxidation


JFET: Junction Field Effect Transistor


kg: Kilogram

kN: Kilo Newton

KOH: Potassium Hydroxide

KP : Kilo Pascal

KSIE : Thousand Square Inch Equivalent


LAD: Large Area Defect

Lg : Transistor Gate length

LLS : Localized Light Scatterers

LLPD’s: Large Light Point Defects

LPCVD: Low Pressure Chemical Vapor Deposition

LPD's: Light Point Defects

LPD-E : Light Point Defect, class E (a KLA-Tencore SP1 defect class)

LPD-N: Light Point Defect, class N (a KLA-Tencor SP1 defect class)

LPD-S : Light Point Defect, class S (a KLA-Tencor SP1 defect class)

LPE : Liquid Phase Epitaxy

LSE: Latex Sphere Equivalent particle size

LSI: Large scale integration

LSTD : Laser Scattering Topographic Detection

LTO: Low Temperature Oxide


M9K: MEMC Proprietary polishing machine

MBE: Molecular Beam Epitaxy

MDZ: Magic Denuded Zone (gettering)

MEMS: Micro-ElectroMechanical System

MIM: Metal-Insulator:Metal

MLD : Modified Low Dose

mm : 1/1000 of a meter and 0.03937 inch

mm/min: Millimeters per minute

MNOS : Metal Nitride Oxide Semiconductor

MOCVD : MetalOrganic Chemical Vapor Deposition

MODFET: Modulation-Doped Field Effect Transistor

MOS: Metal Oxide Semiconductor

MOSFET: Metal Oxide Semiconductor Field Effect Transistor

MRAM : Magneto resistive Random Access Memory

MSI: Medium-scale integration

MSIE: Million Square Inch Equivalent


N : Silicon doped to create excess negative charge carriers (electrons)

N+ : Heavily doped, N-type silicon

NT : Nanotopography

: Nitrogen gas

nm: Nanometers

NMOS: N-channel Metal Oxide Semiconductor

NPT: Non-Punch Through


: Oxygen

Oi: Interstitial Oxygen

OISF: Oxidation:Induced Stacking Fault

OPP: Optical Precipitate Profiler

OUM: Ovonics Undivided Memory


P: Silicon doped to create excess positive charge carriers (holes)

P-: Lightly doped P:type silicon wafer

P+: Heavily doped P-type silicon wafer

P/P+: Lightly doped P-type epi layer on a heavily doped P-type substrate

P/P-: Lightly doped P-type epi layer on a lightly doped P-type substrate

P-band: Anomalous oxygen precipitation region in vicinity of the vacancy/interstitial boundary

PD-SOI: Partially Depleted Silicon-on-Insulator

PECVD: Plasma Enhanced Chemical Vapor Deposition Furnace

PFRAM: Polymeric Ferro electric Random Access memory

PFZ: Precipitate Free Zone (depth measured from the surface that is free of oxygen precipitates but not necessarily depleted in interstitial oxygen)

PMOS: P-channel Metal Oxide Semiconductor

PPB: Parts Per Billion

PPC: Post Polish Clean

PPE: Personal Protective Equipment

PPM: Parts per Million

PPMA: Parts Per Million Atomic

PPMD: Parts Per Million Defective

PPT: Parts per Trillion

PROM: Programmable Read:only Memory

PT: Punch Through

P/V: Peak to Valley measurement

PZT: Lead Zirconate Titanate


RAM: Random Access Memory

RF: Radio Frequency

RFCMOS : Radio-Frequency Complementary Metal Oxide Semiconductor

ROM: Read:only Memory

RSD: Raised Source/Drain

RTA: Rapid Thermal Anneal

RTP: Rapid Thermal Process


SAC : Sub micron Application Crystal

SBIR: Site Flatness, back-referenced

SBSD : Soft Backside Damage

SC1: 1st cleaning bath in the standard "RCA clean" sequence, consisting of solutions designed to remove particles from Si surface

SC2: 2nd cleaning bath in the standard "RCA clean" sequence, consisting of solutions designed to remove particles from Si surface

SCE: Short Channel Effects

SEM: Scanning Electron Microscope

SFQR: Site flatness, best:fit, front-referenced

SFSR: Site flatness, best:fit, front-referenced, scanning site

SGOI: Strained Si on SiGe on Insulator

Si: Silicon

SIE : Square Inch Equivalent

SIMOX : Separation by Implantation of Oxygen

SIMS: Secondary Ion Mass Spectroscopy

SiO: Silicon Monoxide

SiO²: Silicon Dioxide

SIP: Single Inline Package

SIRM: Scanning Infra:red Microscope

SoC: System-on-a-Chip

SOI: Silicon:on:Insulator

SOS: Silicon-on-Sapphire

SPT: Soft Punch Through

SPV: Surface Photovoltage

SRAM: Static Random Access Memory

SRP: Spreading Resistance Probe or Spreading Resistance Profile

SSI: Small-scale integration

sSi : Strained Silicon

SSIS: Surface Scanning Inspection System

SSOI: Strained Silicon directly on Insulator

SSP: Single Side Polish

STD: Standard

STD CZ: Standard Czochralski-grown Crystal

STI: Shallow Trench Isolation

STIR: Site TIR (Total Indicated Reading)


T: Temperature

TCS: Trichlorosilane

TEM: Transmission Electron Microscope

TIR: Total Indicated Reading

TOX: Gate Oxide Thickness

Tsoi: Thickness of SOI top Si Layer

TSOP: Thin Small Outline Package

TTV : Total Thickness Variation


ULSI: Ultra Large:scale Integration


v/G: v: growth rate (crystal pulling rate), G: Vertical temperature gradient at melt/solid interface

VI : Vacancy Interstitial

VLSI : Very Large-scale Integration

VPE: Vapor Phase Epitaxy


WRFTIR: Whole Rod Fourier Transform Infra-Red Spectroscopy


XTL: Crystal


ZD: Zero Dislocation