SEMICONDUCTOR ACRONYMS & SYMBOLS
A
Å: Angstrom
A-defects: Dislocation loops in silicon formed by agglomeration of interstitial
AA: Atomic absorption
AE: Acid etch
AFM: Atomic force microscopy
ALCVD : Atomic layer chemical vapor deposition
AMC : Barrel or batch type epi reactor (Applied Materials)
APCVD: Atmospheric:pressure chemical vapor deposition furnace
ASIC: Application specific integrated circuit
ASM: A single-chamber epi reactor (ASM America)
ASTM: American Standard Test Method
ASTM : American society for testing and materials
B
BESOI: Bonded and Etch Back SOI
BGSOI : Bonded and Grind Back SOI
BJT : Bipolar Junction Transistor
BMD: Bulk Micro-defects or Bulk Micro-defect Density
BOE: Buffered Oxide Etch
Box: Buried Oxide Layer
BP: Backside Polish
BV: Breakdown Voltage
Bvox: Breakdown Voltage-oxide
C
°C : Centigrade
°C/min: Centigrade per minute
CD: Critical dimension
CE: Caustic Etch
Cm: Centimeter (0.01 meter)
CMOS: Complementary metal Oxide Semiconductor
CMP: Chemical Mechanical Polishing
CO : Carbon Monoxide
CO²: Carbon Dioxide
COO: Cost of Ownership
COP’s: Crystal Originated Particles
CoQC: Certificate of Quality Conformance
CP: Crystal Puller
CV : Capacity or capacitance voltage
CVD: Chemical Vapor Deposition
CZ: Czochralski method of pulling single crystal.
D
D-defects : Very small voids in Silicon formed by agglomeration of vacancies
DIBL: Drain induced barrier lowering
DIC : Differential interference contrast
DL: Diffusion length
DMOS: Double-diffused MOS
DOE: Design of Experiments
DOF: Depth of Focus
DRAM: Dynamic Random Access memory
Dsod : Direct Surface oxide Defect
DSP: Double Sided Polish
DZ: Denuded Zone
E
eDRAM: Embedded Dynamic Random Access Memory
EG: Enhanced Gettering
EEPROM: Electrically:erasable and Programmable Read-only Memory
EPROM: Erasable and Programmable Read-only memory
EOT: Equivalent Oxide Thickness
EPI : Epitaxy
ESF : Epi Stacking Fault
F
FBE: Floating Body Effect
FET: Field Effect Transistor
FD:SOI: Fully depleted silicon-on-Insulator
FPD: Flow pattern Defect (ref. Crystal)
FPD: Focal Plane Deviation (ref. Mechanical flatness)
FRAM: Ferroelectric Random Access Memory
FTIR : Fourier Transform Infra-Red Spectroscopy
FZ: Float Zone method of Crystal Pulling
G
GBIR: Global flatness, back:referenced
Ge OI: Germanium-on-Insulator
GFA: Gas Fusion Analysis
GOI: Gate Oxide Integrity
GTIR: Global Total Indicated Reading
GUI: Graphical User Interface
H
H²: Hydrogen Gas
H²O²: Hydrogen Peroxide
HCl: Hydrogen Chloride
HF : Hydrofluoric Acid
HMOS: High performance MOS
HZ: Hot zone
I
IC: Integrated Circuit
IDM: Integrated Device Manufacture
IG: Internal Gettering
IGBT : Insulated Gate Bipolar Transistor
IQC : Incoming Quality Control
ISO: Internation Standards Organization
ITOX: Internal Oxidation
J
JFET: Junction Field Effect Transistor
K
kg: Kilogram
kN: Kilo Newton
KOH: Potassium Hydroxide
KP : Kilo Pascal
KSIE : Thousand Square Inch Equivalent
L
LAD: Large Area Defect
Lg : Transistor Gate length
LLS : Localized Light Scatterers
LLPD’s: Large Light Point Defects
LPCVD: Low Pressure Chemical Vapor Deposition
LPD’s: Light Point Defects
LPD-E : Light Point Defect, class E (a KLA-Tencore SP1 defect class)
LPD-N: Light Point Defect, class N (a KLA-Tencor SP1 defect class)
LPD-S : Light Point Defect, class S (a KLA-Tencor SP1 defect class)
LPE : Liquid Phase Epitaxy
LSE: Latex Sphere Equivalent particle size
LSI: Large scale integration
LSTD : Laser Scattering Topographic Detection
LTO: Low Temperature Oxide
M
M9K: MEMC Proprietary polishing machine
MBE: Molecular Beam Epitaxy
MDZ: Magic Denuded Zone (gettering)
MEMS: Micro-ElectroMechanical System
MIM: Metal-Insulator:Metal
MLD : Modified Low Dose
mm : 1/1000 of a meter and 0.03937 inch
mm/min: Millimeters per minute
MNOS : Metal Nitride Oxide Semiconductor
MOCVD : MetalOrganic Chemical Vapor Deposition
MODFET: Modulation-Doped Field Effect Transistor
MOS: Metal Oxide Semiconductor
MOSFET: Metal Oxide Semiconductor Field Effect Transistor
MRAM : Magneto resistive Random Access Memory
MSI: Medium-scale integration
MSIE: Million Square Inch Equivalent
N
N : Silicon doped to create excess negative charge carriers (electrons)
N+ : Heavily doped, N-type silicon
NT : Nanotopography
N²: Nitrogen gas
nm: Nanometers
NMOS: N-channel Metal Oxide Semiconductor
NPT: Non-Punch Through
O
O²: Oxygen
Oi: Interstitial Oxygen
OISF: Oxidation:Induced Stacking Fault
OPP: Optical Precipitate Profiler
OUM: Ovonics Undivided Memory
P
P: Silicon doped to create excess positive charge carriers (holes)
P-: Lightly doped P:type silicon wafer
P+: Heavily doped P-type silicon wafer
P/P+: Lightly doped P-type epi layer on a heavily doped P-type substrate
P/P-: Lightly doped P-type epi layer on a lightly doped P-type substrate
P-band: Anomalous oxygen precipitation region in vicinity of the vacancy/interstitial boundary
PD-SOI: Partially Depleted Silicon-on-Insulator
PECVD: Plasma Enhanced Chemical Vapor Deposition Furnace
PFRAM: Polymeric Ferro electric Random Access memory
PFZ: Precipitate Free Zone (depth measured from the surface that is free of oxygen precipitates but not necessarily depleted in interstitial oxygen)
PMOS: P-channel Metal Oxide Semiconductor
PPB: Parts Per Billion
PPC: Post Polish Clean
PPE: Personal Protective Equipment
PPM: Parts per Million
PPMA: Parts Per Million Atomic
PPMD: Parts Per Million Defective
PPT: Parts per Trillion
PROM: Programmable Read:only Memory
PT: Punch Through
P/V: Peak to Valley measurement
PZT: Lead Zirconate Titanate
R
RAM: Random Access Memory
RF: Radio Frequency
RFCMOS : Radio-Frequency Complementary Metal Oxide Semiconductor
ROM: Read:only Memory
RSD: Raised Source/Drain
RTA: Rapid Thermal Anneal
RTP: Rapid Thermal Process
S
SAC : Sub micron Application Crystal
SBIR: Site Flatness, back-referenced
SBSD : Soft Backside Damage
SC1: 1st cleaning bath in the standard “RCA clean” sequence, consisting of solutions designed to remove particles from Si surface
SC2: 2nd cleaning bath in the standard “RCA clean” sequence, consisting of solutions designed to remove particles from Si surface
SCE: Short Channel Effects
SEM: Scanning Electron Microscope
SFQR: Site flatness, best:fit, front-referenced
SFSR: Site flatness, best:fit, front-referenced, scanning site
SGOI: Strained Si on SiGe on Insulator
Si: Silicon
SIE : Square Inch Equivalent
SIMOX : Separation by Implantation of Oxygen
SIMS: Secondary Ion Mass Spectroscopy
SiO: Silicon Monoxide
SiO²: Silicon Dioxide
SIP: Single Inline Package
SIRM: Scanning Infra:red Microscope
SoC: System-on-a-Chip
SOI: Silicon:on:Insulator
SOS: Silicon-on-Sapphire
SPT: Soft Punch Through
SPV: Surface Photovoltage
SRAM: Static Random Access Memory
SRP: Spreading Resistance Probe or Spreading Resistance Profile
SSI: Small-scale integration
sSi : Strained Silicon
SSIS: Surface Scanning Inspection System
SSOI: Strained Silicon directly on Insulator
SSP: Single Side Polish
STD: Standard
STD CZ: Standard Czochralski-grown Crystal
STI: Shallow Trench Isolation
STIR: Site TIR (Total Indicated Reading)
T
T: Temperature
TCS: Trichlorosilane
TEM: Transmission Electron Microscope
TIR: Total Indicated Reading
TOX: Gate Oxide Thickness
Tsoi: Thickness of SOI top Si Layer
TSOP: Thin Small Outline Package
TTV : Total Thickness Variation
U
ULSI: Ultra Large:scale Integration
V
v/G: v: growth rate (crystal pulling rate), G: Vertical temperature gradient at melt/solid interface
VI : Vacancy Interstitial
VLSI : Very Large-scale Integration
VPE: Vapor Phase Epitaxy
W
WRFTIR: Whole Rod Fourier Transform Infra-Red Spectroscopy
X
XTL: Crystal
Z
ZD: Zero Dislocation